PEC for Exposure on Thin Membranes


When preparing patterns for exposure on substrates such as silicon nitride membranes, the significant difference in electron scattering on-membrane and off-membrane can prevent use of standard BEAMER proximity effect correction (PEC) or topography-PEC (topo-PEC).


By simulating the electron scattering on and off-membrane using TRACER, we can estimate the difference in base dose between the two regions. In BEAMER, each region of the pattern is proximity effect corrected separately and the difference in required dose is accounted for using the Feature Dose Assignment (FDA) module.